Photoluminescence of Amorphous Multilayer Structures
a-C:H/a-Si:H

A. A. Babaev, I. K. Kamilov, S. B. Sultanov, and A. M. Askhabov

Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences,
ul. Yaragskogo 94, Makhachkala, 367003 Dagestan, Russia

Abstract—The optical absorption edge and the photoluminescence spectra of amorphous hydrogenated dia-
mond-like carbon (a-C:H) films are investigated in the temperature range 4.2–900 K. Low-dimensional multi-
layer structures a-C:H/a-Si:H, in which a-C:H with an optical band gap E_g = 4.5 eV is used as a barrier, are
prepared for the first time. It is found that amorphous hydrogenated silicon (a-Si:H) films with a thickness
d<100 Å exhibit quantum-confinement effects. Analysis of the photoluminescence spectra and the optical
absorption edge of the a-Si:H films shows that the structures a-C:H/a-Si:H have a sharp interface and that
charge carriers in the a-Si:H film undergo quantization.

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.