Plasma Enhanced Chemical Deposition of Nanocrystalline
Silicon Carbonitride Films from Trimethyl(phenylamino)silane

Yu. M. Rumyantsev^a, N. I. Fainer^a,*, B. M. Ayupov^a, and V. I. Rakhlin^b

^aNikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences,
pr. Akademika Lavrent’eva 3, Novosibirsk, 630090 Russia

*e-mail: nadezhda@niic.nsc.ru

^b Favorsky Irkutsk Institute of Chemistry, Siberian Branch, Russian Academy of Sciences,
ul. Favorskogo 1, Irkutsk, 664033 Russia

Received April 16, 2010

Abstract—Synthetic process for nanocrystalline silicon carbonitride films was developed using plasma-chemical
decomposition of a new organosilicon reagent, namely, trimethyl(phenylamino)silane Me₃SiNHPh. Synthesis
was carried out from the gaseous mixtures, such as Me₃SiNHPh + He, Me₃SiNHPh + N₂, and Me₃SiNHPh +
NH₃, in a reactor in the wide temperature range (473–973 K) under the low pressure (4–5 10^–2 Torr).
Polished wafers of Si(100), Ge(111), and silica glass were used as substrates. Dependences of the chemical and
phase compositions, the surface morphology, and the silicon carbonitride optical properties on the process tem-
perature were studied using FTIR and Raman spectroscopy, energy dispersive spectroscopy (EDS), atomic force
microscopy (AFM), scanning electron microscopy (SEM), ellipsometry, and spectrophotometry.

Keywords: silicon carbonitride, plasma-chemical deposition from trimethyl(phenylamino)silane, dependence
of films composition on the synthesis temperature

DOI: 10.1134/S1087659611030114

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