Precursors for Preparation of Silicon Carbonitride Films
V. I. Rakhlina, I. P. Tsirendorzhievaa, M. G. Voronkova,b, L. D. Nikulinac,
S. V. Sysoevc, and M. L. Kosinovac,*
aFavorsky Irkutsk Institute of Chemistry, Siberian Branch, Russian Academy of Sciences,
ul. Favorskogo 1, Irkutsk, 664033 Russia
bGrebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences,
nab. Admirala Makarova 2, St. Petersburg, 199034 Russia
cNikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences,
pr. Akademika Lavrent’eva 3, Novosibirsk, 630090 Russia
*e-mail: marina@che.nsk.ru
Received September 10, 2009
Abstract—A series of aminosilanes has been synthesized by the reaction of carboxylic acid di(organyl)amides
with trimethyliodsilane. A purification method providing an increase in the yield of end products to 82% has
been developed. The identity of the products has been confirmed using an elemental analysis and IR, UV, and
1H NMR spectroscopy. The spectral characteristics of the synthesized aminosilanes have been determined. The
temperature dependences of the saturated vapor pressure have been established, and the thermodynamic char-
acteristics of the vaporization processes have been calculated. It has been demonstrated that the aminosilanes
Me3SiNEt2, Me3SiNHAll, and Me3SiNHPh are heat resistant in the temperature range 296–452 K and have a
vapor pressure sufficient for their use in the processes of chemical vapor deposition of a substance, so that they
can be recommended as precursors for synthesis of silicon carbonitride films.
Key words: synthesis and properties of aminosilanes, silicon carbonitride, thin-film ferroelectrics, trime-
thyl(organylamino)silanes, CVD method, reactions of carboxylic acid di(organyl)amides
DOI: 10.1134/S1087659610030156
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