Specific Features of the Relaxation Processes in As₂Se₃ Films
Prepared by Different Methods

V. A. Bordovskii, R. A. Kastro, G. I. Grabko, and T. V. Taturevich

Herzen Russian State Pedagogical University, nab. r. Moiki 48, St. Petersburg, 191186 Russia

Received June 21, 2005

Abstract—The specific features of the processes of charge transfer and accumulation in thin films of arsenic
triselenide As₂Se₃ are investigated by measuring the isothermal relaxation of dark electric currents. It is estab-
lished that the relaxation properties of the films substantially depend on the method used for their preparation,
which, apparently, can be associated with the structural features of this class of materials. Moreover, it is con-
firmed that the relaxation of the electric current in the films of chalcogenide glasses under investigation occurs
through a non-Debye mechanism, irrespective of the preparation technique.

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