Gel Method for Use in Planar Technology for Fabricating
Semiconductor Gas Sensors
O. A. Shilova
Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences,
ul. Odoevskogo 24/2, St. Petersburg, 199155 Russia
Received February 25, 2003
Abstract—This paper reports on the results of investigations into the specific features of the formation of sili-
cate nanosized films from sols based on tetraethoxysilane (hydrolyzed in an acid medium in the presence of
inorganic dopants) on the surface of semiconductor materials. The properties of the films thus prepared are ana-
lyzed as functions of the synthesis conditions of sols and the conditions of deposition and heat treatment of the
films. It is demonstrated that these films can be used in technology for fabricating semiconductor gas sensors
based on SnO2.
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