Preparation of Oxidized PbSeO₃ Films from PbSe Films

V. V. Tomaev^a and Yu. V. Petrov^b

^aSt. Petersburg State University, Chemical Faculty, Petrodvorets Branch,
Universitetskii pr., 26, St. Petersburg, 198504 Russia

e-mail: tvaza@mail.ru

^bSt. Petersburg State University, Physical Faculty, Petrodvorets Branch,
Ulianovskaya, 1, St. Petersburg, 198504 Russia

Received November 26, 2010

Abstract—Lead selenide nanocrystalline films of a controlled thickness have been obtained using vacuum dep-
osition onto substrates of C-29 glass, part of which were oxidized in a dry air atmosphere. The surfaces and
cleavages of both initial and oxidized PbSe films are studied using scanning electron microscopy. The qualita-
tive and quantitative estimation of the elemental content in the subsurface region of all studied films based on
PbSe is investigated using X-ray microanalysis. The presence of lead selenide and lead selenite on the surface
of the films under study is proven, and the principle possibility of forming PbSeO₃ films from PbSe films is
shown.

Keywords: lead selenide, lead selenite, chalkogenide, oxide, narrow-gap semiconductor

DOI: 10.1134/S1087659612020113

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