Photoinduced Changes of the Rate of Dissolution
of Bilayer Films of Chalcogenide Glasses

A. V. Belykh^a, S. Yu. Kaputkina^b, M. D. Mikhailov^c, and A. S. Tverjanovich^b

^aJSC HoloGrate, pr. Rimskogo-Korsakova 45, St. Petersburg, 190068 Russia

^bSt. Petersburg State University, Universitetskii pr. 26, Petrodvoretz, St. Petersburg, 198504 Russia

^cSt. Petersburg State Polytechnic University, Politekhnicheskaya ul. 29, St. Petersburg, 195251 Russia

e-mail: mikhail@ftim.spbstu.ru

Received December 29, 2010

Abstract—The change of the rate of dissolution upon the exposure of bilayer As₃₉S₆₁/As₃₆S₄₄Se₂₀ films to light
of wavelength 380 nm and more than 470 nm from the sulfo-selenide layer side has been investigated. Although
light of wavelength 380 nm is absorbed in the first layer, in the second layer photoinduced structural changes are
observed, which are assumed to occur as a result of the diffusion of electron–hole pairs from the illuminated sele-
nium-containing layer to the nonexposed arsenic sulfide in contact. The excess charge carriers induce structural
changes in the As₃₉S₆₁ film that are registered as dissolution rate changes. The calculated value of the drift mobility
of the slowest charge carriers (electrons) of 10^–11 cm²/(V s) is in agreement with the literature data. Studies of the
Raman spectra of the films of interest confirmed that the diffusion of excess electrons and holes into the sulfide
layer resulted in structural changes that manifested themselves in a decrease in the intensities and widths of the
bands corresponding to vibrations of structural groups containing homopolar bonds.

Keywords: chalcogenide glass, photostructural transformations, arsenic sulfide

DOI: 10.1134/S1087659612020022

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