Thermal Oxidation of A^IIIB^V Semiconductors
with V₂O₅ Nanolayers on the Surface

I. Ya. Mittova, E. V. Tomina, A. A. Lapenko, and B. V. Sladkopevtsev

Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006 Russia

e-mail: inorg@chem.vsu.ru

Received January 26, 2007

Abstract—The specific features of the interaction of vanadium(V) oxide nanofilms with the surface of gallium
arsenide and indium phosphide semiconductors under thermal oxidation conditions have been considered. The
kinetics and mechanism of thermal oxidation of GaAs and InP with deposited V₂O₅ layers 15 and 25 nm in
thickness have been studied. It has been revealed that vanadium(V) oxide exerts a specific effect on the oxida-
tion of gallium arsenide and indium phosphide as compared to other d-metal oxides. It has been established that
the oxidation occurs with the formation of a phase predominantly consisting of indium phosphates or gallium
arsenates and intermediate products based on vanadium compounds in different oxidation states. Schemes have
been proposed for the development of the oxidation processes with due regard for the chemical nature of vana-
dium(V) oxide.

Keywords: indium phosphide, gallium arsenide, oxidation, nanolayers

DOI: 10.1134/S1087659611020106

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