Thermal Oxidation of Gallium Arsenide with the Surface
Modified
by Transition Metal Oxides

E. V. Tomina, I. Ya. Mittova, A. S. Sukhochev, and B. V. Sladkopevtsev

Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006 Russia

e-mail: inorg@chem.vsu.ru

Received December 9, 2008

Abstract—The characteristic features of the interaction of nickel and cobalt oxide nanofilms deposited on the
GaAs substrate with the substrate surface during thermal oxidation have been considered. The mechanism of
influence of the oxides under investigation on the thermal oxidation of the semiconductor, as well as on the
composition and properties of multicomponent layers formed upon oxidation, has been revealed. The specific
features of the interaction of transition metal oxides in the processes under consideration as compared to p ele-
ment oxides (Bi₂O₃, PbO) have been established. Schemes have been proposed for the processes developing at
the metal oxide–gallium arsenide interface.

Key words: gallium arsenide, nickel and cobalt oxide films, interaction with substrate

DOI: 10.1134/S1087659610020136

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