Formation of Radiation-Induced Defects in Silica Glasses
at High Irradiation Temperatures

I. Nuritdinov, K. Yu. Masharipov, and M. O. Doniev

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, pos. Ulugbek, Tashkent, 702132 Uzbekistan

Received June 8, 2001

Abstract—The mechanisms of formation of radiation-induced defects in silica glasses are investigated under
both simultaneous and sequential exposure to -radiation and high temperatures. It is demonstrated that silica
glasses contain E'(T) centers (T = Si and Al) in impurity-free regions and (T) centers in the vicinity of alkali
metal impurities. These centers can undergo transformations. The origin of a new center responsible for the
absorption band at 360 nm is elucidated. This center is identified as a twofold-coordinated aluminum atom with
a trapped electron.

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