Effect of Thermal Annealing on the Surface of Sol-Gel Prepared
Oxide Film Studied by Atomic Force Microscopy
and Raman Spectroscopy¹

A. A. Ponomareva^{a, b}, V. A. Moshnikov^a, O. A. Maslova^c, Yu. I. Yuzyuk^c, and G. Suchaneck^b

^aSt. Petersburg State Electrotechnical University (LETI), Russia, 197376, St. Petersburg, Prof. Popov 5
e-mail: ap_k@inbox.ru

^bTU Dresden, Solid State Electronics Laboratory, 01062 Dresden, Germany

^cSouthern Federal University, Department of Physics, Russia, 344006, Rostov-on-Don, Bolshaya Sadovaya Str. 105/42

Received February 16, 2012

Abstract—In this work, we have investigated the surface topography evolution of sol-gel deposited SiO₂–SnO₂
nanocomposite films annealed in the temperature range 200–600C. The fractal dimension of atomic force
microscopy images of the films was determined by the cube counting method and the triangulation method. The
fractal dimension was shown to be an appropriate and easy to use tool for the characterization of nanosized thin
film structures. Raman spectroscopy revealed the formation of a SiO₂ cage-like structure at 400C and SnO₂
crystallization above 500C.

Keywords: the sol-gel method, nanocomposite SiO₂–SnO₂

DOI: 10.1134/S1087659614010192

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