Adhesive and Electrical Properties of the Interface
between Pb_{1 x}Mn_xTe Crystals and InAgAu Alloy

T. D. Alieva, G. J. Abdinova, N. M. Akhundova, and D. Sh. Abdinov

Institute of Physics, National Academy of Sciences, Azerbaijan, Baku

e-mail: aliyevat@yahoo.com

Received October 8, 2007

Abstract—The effect of annealing of Pb_1–xMn_xTe crystals at ~690 K and structures on their basis at ~383 K
on the adhesive and electric properties of the interface in the Pb_1–xMn_xTe–(In–Ag–Au) structure was studied
over the temperature range ~77300 K. The contacts possessed high adhesive strength. The effect of annealing
on contact resistance r_c was determined by a change in the specific resistance of crystals, diffusion of Ag atoms
into the near-contact area of crystals, and the formation of intermediate phases of the Ag₂Te type at the inter-
face.

DOI: 10.1134/S0036024408110319

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