The Direct Resist-Free Deposition of a Lithographic Mask
from Vapor Initiated by an Electron Beam

M. A. Bruk^a, E. N. Zhikharev^b, S. L. Shevchuk^b, I. A. Volegova^a, A. V. Spirin^a, E. N. Teleshov^a,
V. A. Kal’nov^b, and Yu. P. Maishev^b

^a Karpov Research Institute of Physical Chemistry, ul. Vorontsovo pole 10, Moscow, 105064 Russia

^b Physicotechnological Institute, Russian Academy of Sciences, Moscow, Russia

e-mail: bruk@cc.nufhi.ac.ru

Received January 31, 2008

Abstract—A dry resist-free process of electron-beam vapor deposition of an undecane precursor (C₁₁H₂₄)
mask on SiO₂-on-silicon and copper-on-silicon substrates was studied. The band section was trapezoidal, and
the band width at the base was much larger than the diameter of the electron beam and depended on the substrate
(it was three or four times larger on copper than on SiO₂). In mask deposition on copper, the mask thickening
rate was found to depend strongly on the scan time _sc when scanning was performed along the band. When
_sc changed from 20 ms to 13 s, decreased by a factor of 7.4 (beam current 1.0 nA). This was probably caused
by significant diffusion delay of precursor transport to the reaction zone during pixel time when _sc was 13 s.
The ion-beam etching of the substrates through the deposited masks was performed (the SiO₂ substrate was
etched with SF₆ ions, and the copper substrate, with Ar ions).

DOI: 10.1134/S0036024408100178

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