The Sensor Properties of Fe₂O₃ In₂O₃ Films:
The Detection of Low Ozone Concentrations in Air

T. V. Belysheva^a, G. N. Gerasimov^a, V. F. Gromov^a, and L. I. Trakhtenberg^{a, b}

^a Karpov Research Institute of Physical Chemistry, ul. Vorontsovo pole 10, Moscow, 105064 Russia

^b Semenov Institute of Chemical Physics, Russian Academy of Sciences, ul. Kosygina 4, Moscow, 117977 Russia

e-mail: belysh@cc.nifhi.ac.ru

Received January 31, 2008

Abstract—The detection of low ozone concentrations in air (no higher than 120 ppb) using semiconducting
films based on Fe₂O₃ · In₂O₃ obtained by laser ablation of the corresponding targets onto alumina substrates
was studied. The temperature of the substrate during film deposition influenced their sensor properties. Tem-
perature effects on the sensitivity of the films with respect to ozone were studied over the temperature range
200380C. Maximum sensitivity was reached at 250C irrespective of the temperature of film deposition. The
dependence of film sensitivity on the concentration of ozone in air was determined. At equal ratios between
In₂O₃ and Fe₂O₃, the sensitivity of the sensor films prepared by laser ablation was much higher than that of
thick-film sensors obtained from aqueous metal oxide suspensions by the stenciling technique. Possible reasons
for the effects observed were considered.

DOI: 10.1134/S0036024408100142

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