The Structure and Luminescence of GaN Films Prepared
by Radical Beam Epitaxy on Porous GaAs (111) Substrates

V. V. Kidalov¹, G. A. Sukach², and A. S. Revenko¹

¹ Berdyansk State Pedagogical University, Berdyansk, Ukraine

² Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 252028 Ukraine

E-mail: kid@bdpu.org; kidalov32@rambler.ru

Abstract—The crystal structure and luminescence of GaN films grown by radical beam epitaxy on porous
GaAs substrates with the (111) orientation were studied. The films consisted of two phases (hexagonal and
cubic); for both phases, exciton bands were observed.

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