A. I. Nikiforov, V. A. Cherepanov, and O. P. Pchelyakov
Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences,
pr. akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
E-mail: nikif@isp.nsc.ru
Abstract—Changes in the surface lattice parameter of a growing Ge film during molecular beam epitaxy on the
surfaces of Si and SiO2 were determined by high-energy electron diffraction. At the instant of three-dimensional
island nucleation, the surface lattice of germanium could increase with respect to the silicon lattice by 8%. Growth
of Ge islands on the oxidized surface of Si occurred without the formation of a wetting layer. The initial stage of
layer growth of a Ge film on the Si(100) and Si(111) surfaces was accompanied by periodic changes in the surface
atomic lattice parameter, which were similar to oscillations of the mirror reflection intensity.
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