Optical Phonons in the InSb Nanocrystals Ion-Beam Synthesized at the Bounding Si/SiO\({}_{\mathbf{2}}\) Interface of Silicon-on-Insulator Structures

Abstract— Properties of optical phonons in InSb nanocrystals ion-beam synthesized at the Si/SiO\({}_{2}\) interface of a silicon-on-insulator (SOI) structure have been studied. Formation of InSb nanocrystals occurred as a result of diffusion of In and Sb atoms from the ion-implanted SiO\({}_{2}\) and Si regions to the bonding interface of the SOI structure at annealing temperatures of 1000 and 1100\({}^{\circ}\)C for 0.5–5 h. The Raman spectra were excited by laser radiation with a wavelength \(\lambda_{\textrm{ex}}=514{.}5\) nm at room temperature. Raman scattering bands were observed in the spectra of the annealed structures, the positions of which corresponded to the TO and LO modes in the InSb. The effect of high-frequency shift of TO and LO modes in InSb nanocrystals has been discovered, which exhibited an inverse dependence on the annealing time as the temperature increased. The nature of the observed effect is related to deformations in nanocrystals. Nonhydrostatic strains are present in nanocrystals formed after annealing at a temperature of 1000\({}^{\circ}\)C. After annealing at 1100\({}^{\circ}\)C strains are observed only at the initial stages of growth and are close to hydrostatic strains.