Optoelectronics, Instrumentation and Data Processing. Vol. 61, No. 1, Pages 69-74, 2024

A. R. Novoselov^a^,*, N. N. Mikhailov^b, R. V. Menshchikov^b, P. A. Aldokhin^a, and A. E. Matochkin^c^,**

^aDesign and Technology Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia

^bRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia

^cInstitute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia

Abstract— The influence of formation of thin layers of CdTe and ZnTe on the shape of instrument plates (IPs) has been clarified. In the process of formation of thin buffer layers of ZnTe (with a thickness of \(20{-}300\) nm) and CdTe (\(5{-}7\) \(\mu\)m) on a GaAs IP (with a thickness of \({\sim}420\) \(\mu\)m), their bending increased by more than 1 \(\mu\)m. A technological solution has been found to reduce the bending of GaAs instrument plates by more than 1 \(\mu\)m after formation of thin layers (CdTe and ZnTe) after technological annealing at a temperature of 600\({}^{\circ}\)C in high vacuum, slow cooling of the specimen (at a cooling rate of 0.5 deg/min) is carried out during 11 h.

Effect of Thin Layers of CdTe and ZnTe on the Shape of GaAs Substrates