Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates

E. A. Klimov^a^,*, S. S. Pushkarev^a^,**, and A. N. Klochkov^b^,***

^aMokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105 Russia

^bNational Research Nuclear University MEPhI, Moscow, 115409 Russia

Correspondence to: *e-mail: klimov_evgenyi@mail.ru
Correspondence to: **e-mail: s_s_e_r_p@mail.ru
Correspondence to: ***e-mail: klochkov_alexey@mail.ru

Received 5 October, 2022

Abstract—The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {In_xGa_1 – xAs/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.

Keywords: molecular-beam epitaxy, GaAs, InGaAs, (110), (111)A, piezoelectric effect, photoluminescence spectroscopy

DOI: 10.1134/S2635167622070126