On the Technology of a Laterally Coupled Bragg Grating of Single-Mode Distributed Feedback Laser Diodes
a Mokerov Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105 Russia
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Received 14 February, 2022
Abstract—We report on the successful development and application of the technology of a Bragg diffraction grating for the implementation of a single-mode ridge-type distributed feedback laser. Single-mode 1550-nm laser transmitters with a side-mode suppression ratio of no lower than 50 dB are made in Russia for the first time. The proposed technology makes it possible to form a rigid dielectric mask for etching the laterally coupled grating with a period from 0.19 to 0.25 μm, which corresponds to the wavelength range of 1.3–1.6 μm.
Keywords: electron-beam lithography, etching of semiconductors, Bragg grating, distributed feedback, laser diode