On the Technology of a Laterally Coupled Bragg Grating of Single-Mode Distributed Feedback Laser Diodes

R. R. Galieva,*, A. Yu. Pavlova, N. S. Tarasova, and K. N. Tomosha

a Mokerov Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105 Russia

Correspondence to: *e-mail: rgaliev@isvch.ru

Received 14 February, 2022

Abstract—We report on the successful development and application of the technology of a Bragg diffraction grating for the implementation of a single-mode ridge-type distributed feedback laser. Single-mode 1550-nm laser transmitters with a side-mode suppression ratio of no lower than 50 dB are made in Russia for the first time. The proposed technology makes it possible to form a rigid dielectric mask for etching the laterally coupled grating with a period from 0.19 to 0.25 μm, which corresponds to the wavelength range of 1.3–1.6 μm.

Keywords: electron-beam lithography, etching of semiconductors, Bragg grating, distributed feedback, laser diode

DOI: 10.1134/S2635167622070059