Structural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates

G. B. Galieva, E. A. Klimova, S. S. Pushkareva,*, V. V. Saraykina, I. S. Vasil’evskiib, A. N. Vinichenkob, M. M. Grekhovb, and A. N. Klochkovb

a Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105 Russia

b National Research Nuclear University MEPhI, Moscow, 115409 Russia

Correspondence to: *e-mail:

Received 27 December, 2021

Abstract—A new structure for photoconductive antennas is proposed, which represents a multilayer epitaxial film grown on a GaAs(111)A substrate and consisting of alternating low-temperature grown undoped GaAs (LTG-GaAs) layers and GaAs layers formed in the standard high-temperature mode and doped with silicon (GaAs:Si). The As4 and Ga flow ratio γ is chosen such that the GaAs:Si layers have p-type conductivity. The LTG-GaAs layers are grown at a high γ value. A similar structure is grown on a (100) substrate as a reference. The structural properties of the samples are investigated: the phase composition is explored by high-resolution X-ray diffractometry; the surface relief, by atomic-force microscopy, and the Si-impurity thickness distribution, by secondary-ion mass spectrometry.

Keywords: molecular-beam epitaxy, GaAs(111)A substrate, photoconductive antenna, low-temperature grown GaAs, secondary-ion mass spectrometry

DOI: 10.1134/S2635167622070047