m Laser Performance of c-Cut Tm:YAP Crystal
with Various Doping Concentration1
Li Hongshu, Zhao Ming*, and Xu Wenhai
College of Information Science Technology, Dalian Maritime University, Dalian 116026, China
*e-mail: eachzhao@126.com
Received February 17, 2012; in final form, May 12, 2012; published online August 1, 2012
Abstract—The influence of the thulium ion concentration on the 1.94-
m laser performance of c-cut Tm:YAP
crystal was investigated in this paper. Three crystals with 3, 4, and 5% Tm3+ (atom concentration) were exam-
ined at 18C. Our experimental results showed that, the best power performance was obtained with the 4%
Tm:YAP crystal. By using 24.8 W of incident pump power at 795 nm, a maximum of 7.5 W of output power
was obtained. The slope efficiency was 48.8%, corresponding to diode-to-Tm conversion efficiency of 30.2%.
DOI: 10.1134/S1054660X12090071
Pleiades Publishing home page | journal home page | top
If you have any problems with this server, contact webmaster.