Wavelength Switching Based on Quantum-Dot Vertical-Cavity
Surface-Emitting Laser¹

P. C. Peng^a, *, H. Y. Wang^a, R. L. Lan^a, H. H. Lu^{a, b}, G. R. Lin^c, G. Lin^d, and J. Y. Chi^e

^a Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei, Taiwan, R.O.C.

^b Department of Information Technology and Communication, Tungnan University, New Taipei City, Taiwan, R.O.C.

^c Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan
University, Taipei, Taiwan, R.O.C.

^d Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

^e Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan, R.O.C.

*e-mail: pcpeng@ntut.edu.tw

Received September 24, 2011; in final form, May 3, 2012; published online August 1, 2012

Abstract—This study investigates, for the first time, static and dynamic wavelength switching characteristics
of the 1.3 m quantum-dot vertical-cavity surface-emitting laser (QD VCSEL). The free-running QD VCSEL
with 1 and 2 state innately is injected by a laser source with 1 state. When the injection power exceeds the
threshold power, the dominant state of the QD VCSEL changes from 2 to 1 state. Results of this study dem-
onstrate that the wavelength switching based on a 1.3 m QD VCSEL has a simpler and more cost-effective
configuration than those of previous systems.

DOI: 10.1134/S1054660X12090149

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