Electron Radiation Effects on InAs/GaAs Quantum Dot Lasers¹

Chi Che*, Qiqi Han, Jing Ma, Yanping Zhou, Siyuan Yu, and Liying Tan

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

*e-mail: chiche.hit@gmail.com

Received February 14, 2012; in final form, March 27, 2012; published online July 9, 2012

Abstract—The InAs/GaAs quantum dot laser diodes and corresponding quantum dot samples are irradiated by
1 MeV electron. The laser performance and quantum dot photoluminescence intensity at room temperature are
enhanced over a fluence range of 4 10¹³ cm^–2. The radiation-induced defects increase the efficiency of carrier
transfer to the quantum dots, which results in the improvement of photoluminescence performance under low
level displacement damage. The contact resistant of quantum dot lasers decreases because the ohmic contact is
also improved by electron irradiation.

DOI: 10.1134/S1054660X12080051

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