Chih-Hua Hsieha, Jeng-Ywan Jenga, *, San-Liang Leeb, and Yen-Ting Panc
a Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan
b Department of Electronic Engineering and Intelligent Building Research Center,
National Taiwan University of Science and Technology, Taipei, Taiwan
c Department of Opto-Mechatronics Technology Center, National Taiwan University of Science and Technology, Taipei,
Taiwan
*e-mail: jeng@mail.ntust.edu.tw
Received November 27, 2011; in final form, March 7, 2012; published online June 12, 2012
Abstract—This study is the first to demonstrate the selectivity quantum well intermixing process by using a
femtosecond laser scanning-induced disordering technique. The advantages of the femtosecond laser are pho-
tochemical machining and the two-photon absorption mechanism. The femtosecond laser system can convert
writing into the scan to create a nanostructure by adjusting the lens. The effect of power on the band gap shift
during laser scanning was investigated. The band gap shift was small and unstable without the heating substrate.
A wavelength shift higher than 77.3 nm for the InGaAsP MQW material was obtained at elevated temperatures.
10.1134/S1054660X1207002X
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