Efficient Nd:Y_0.5Gd_0.5VO₄-KTiOPO₄ Green Laser
under Diode Pumping into the Emitting Level ⁴F_3/2¹

D. W. Feng^a, *, Y. Feng^b, and G. W. Zhang^a

^a Science Park, Changchun University of Science and Technology, Changchun 130022, China

^b National Key Lab. of High Power Semiconductor Lasers, Changchun University of Science and Technology,
Changchun 130022, China

*e-mail: custfengdawei@163.com

Received December 8, 2011; published online April 3, 2012

Abstract—We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous
wave (cw) laser operation of a 1064 nm Nd:Y_0.5Gd_0.5VO₄ laser under diode pumping into the emitting level
⁴F_3/2. A KTiOPO₄ (KTP) crystal, cut for critical type-II phase matching at room temperature is used for second
harmonic generation (SHG) of the laser. At an incident pump power of 17.8 W, as high as 4.21 W of cw output
power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 23.6%, and the fluctuation of
the green output power was better than 2.8% in the given 30 min.

DOI: 10.1134/S1054660X12050088

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