Diode-Pumped Nd:LGS/LBO Laser at 452 nm¹

D. W. Feng^a, Y. Feng^b, and G. W. Zhang^a

^a Science Park, Changchun University of Science and Technology, Changchun 130022, China

^b National Key Lab. of High Power Semiconductor Lasers, Changchun University of Science and Technology,
Changchun 130022, China

e-mail: custfengdawei@163.com

Received December 7, 2011; in final form, December 8, 2011; published online April 3, 2012

Abstract—We report a blue laser at 452 nm generation by intracavity frequency doubling of a continuous wave
(cw) laser operation of a 904 nm Nd:LGS laser under 808 nm diode pumping. A LiB₃O₅ (LBO) crystal, cut for
critical type I phase matching at room temperature is used for second harmonic generation (SHG) of the laser.
At an incident pump power of 17.8 W, as high as 1.14 W of cw output power at 452 nm is achieved. The optical-
to-optical conversion efficiency is up to 6.4%, and the fluctuation of the blue output power was better than 4.1%
in the given 30 min.

DOI: 10.1134/S1054660X12050076

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