Diode-Pumped Nd:LGS Laser Emitting at 888 nm¹

S. T. Li*, Y. Dong, C. Wang, and B. Z. Li

School of Science, Changchun University of Science and Technology, Changchun 130022, China

*e-mail: shutaolee@gmail.com

Received December 5, 2011; in final form, December 7, 2011; published online April 3, 2012

Abstract—We present what is, to the best of our knowledge, the first diode-pumped Nd:La₃Ga₅SiO₁₄
(Nd:LGS) laser emitting at 888 nm, based on the ⁴F_3/2–⁴I_9/2 transition, generally used for a 904 nm emission.
The use of a pump module with 16 passes through the crystal allowed the realization of a Nd:LGS thin-disk
laser with 1.41 W of continuous wave (cw) output power at 888 nm. Moreover, intracavity second-harmonic
generation (SHG) in cw mode has also been demonstrated with a power of 221 mW at 444 nm by using a
BiB₃O₆ (BiBO) nonlinear crystal.

DOI: 10.1134/S1054660X12050155

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.