Efficient Nd:Y_0.36Gd_0.64VO₄-GdCa₄O(BO₃)₃ Red Laser
under Diode Pumping into the Emitting Level¹

Y. L. Li^a, *, L. X. Zhang^b, and Y. C. Zhang^a

^a School of Electronics and Information Engineering, Changchun University of Science and Technology,
Changchun 130022, China

^b Respiratory Department, Affiliated Hospital of Changchun University of Chinese Medicine, Changchun 130021, China

*e-mail: liyongliang1973@163.com

Received November 29, 2011; published online April 3, 2012

Abstract—We report a red laser at 671 nm generation by intracavity frequency doubling of a continuous wave
(cw) laser operation of a 1342 nm Nd:Y_0.36Gd_0.64VO₄ laser under diode pumping into the emitting level ⁴F_3/2.
An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for sec-
ond harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 1.12 W of cw output
power at 671 nm is achieved. The optical-to-optical conversion efficiency is up to 6.3%, and the fluctuation of
the red output power was better than 3.5% in the given 30 min.

DOI: 10.1134/S1054660X12050180

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