Continuous-Wave Nd:GdVO₄/LBO Laser at 541.5 nm
under Diode Pumping into the Emitting Level¹

Y. L. Li^a, *, Y. H. Zhang^b, and Y. C. Zhang^a

^a School of Electronics and Information Engineering, Changchun University of Science and Technology,
Changchun 130022, China

^b Changchun UP Optotech Co., Ltd. Changchun 130031, China

*e-mail: liyongliang1973@163.com

Received November 30, 2011; in final form, December 3, 2011; published online April 3, 2012

Abstract—We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous
wave (cw) laser operation of a 1083 nm Nd:GdVO₄ laser under 880 nm diode pumping into the emitting level
⁴F_3/2. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second
harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power
at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the
green output power was better than 3.6% in the given 30 min.

DOI: 10.1134/S1054660X12050192

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