High Peak Power and Sub-Picosecond Fourier-Limited Pulse
Generation from Passively Mode-Locked Monolithic Two-
Section Gain-Guided Tapered InGaAs Quantum-Dot Lasers¹

D. I. Nikitichev^a, *, Y. Ding^a, M. A. Cataluna^a, E. U. Rafailov^a, L. Drzewietzki^b, S. Breuer^b,
W. Elsaesser^b, M. Rossetti^c, P. Bardella^c, T. Xu^c, I. Montrosset^c, I. Krestnikov^d,
D. Livshits^d, M. Ruiz^e, M. Tran^e, Y. Robert^e, and M. Krakowski^e

^a University of Dundee, School of Engineering, Physics and Mathematics, Dundee, DD1 4HN, UK

^b Institut für Angewandte Physik, Technische Universität Darmstadt, Schlo gartenstr. 7, 64289 Darmstadt, Germany

^c Politecnico di Torino, Dipartimento di Elettronica, Turin, Italy

^d Innolume GmbH, Konrad-Adenauer-Allee 11, 44263 Dortmund, Germany

^e III–V Lab, 1 Av Augustin Fresnel, Campus de Polytechnique, 91767 Palaiseau, France

*e-mail: d.nikitichev@dundee.ac.uk

Received October 21, 2011; in final form, November 15, 2011; published online March 6, 2012

Abstract—We report on the development of a new generation of high-power ultrashort pulse quantum-dot
lasers with tapered gain section. Two device designs are proposed and fabricated, with different total lengths
and absorber-to-gain-section length-ratios. These designs have been informed by numerical simulations of the
dynamic mode-locking regimes and their dependence on the structural parameters. One device design demon-
strated a record-high peak power of 17.7 W with 1.26 ps pulse width and a second design enabled the generation
of a Fourier-limited 672 fs pulse width with a peak power of 3.8 W. A maximum output average power of 288
mW with 28.7 pJ pulse energy was also attained. In addition, the integrated timing jitter of 2.6ps and far-field
patterns are demonstrated.

10.1134/S1054660X12040147

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