Passively Mode-Locked Nd:GGG Laser with a Semiconductor
Saturable Absorber Mirror¹

B. Y. Zhang^{a, b}, J. L. Xu^a, G. J. Wang^b, J. L. He^a, *, W. J. Wang^b, Q. L. Zhang^c,
D. L. Sun^c, J. Q. Luo^c, and S. T. Yin^c

^a State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100, China

^b College of Physics Science and Information Engineering, Liaocheng University, Liaocheng 252059, China

^c The Key Laboratory of Photonic Devices and Materials ofAnhui; Anhui Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, Hefei 230031, China

*e-mail: jlhe@sdu.edu.cn

Received November 8, 2011; in final form, November 17, 2011; published online March 6, 2012

Abstract—The mode-locking operation of the Nd:GGG crystal with a semiconductor saturable absorber mir-
ror (SESAM) was demonstrated. Continuous wave (CW) mode-locking was obtained with the pulse duration
of 11 ps and the pulse repetition rate of 40.38 MHz. At 7 W of pump power, the maximum average output power
of 1.1 W was obtained with the slope efficiency of 18.1%.

DOI: 10.1134/S1054660X12040317

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