Study of Yb:YVO₄ Lasers End-Pumped by a 985-nm
Diode Laser¹

X. Tian^a, Zh. Zhou^a, Q. Dai^a, W. Han^{a, b}, J. Liu^{a, b,} *, and H. Zhang^c

^a College of Physics, Qingdao University, Ning-Xia Road 308, Qingdao 266071, China

^b Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University),
Ning-Xia Road 308, Qingdao 266071, China

^c State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

*e-mail: junhai_liu@hotmail.com

Received November 9, 2011; in final form, November 13, 2011; published online March 6, 2012

Abstract—Efficient continuous-wave operation is demonstrated at room temperature with a Yb:YVO₄ laser
end pumped by a 985-nm diode. An output power of 2.46 W is generated at the highest available absorbed pump
power of 6.2 W, with an optical-to-optical and slope efficiency of 40 and 76%, respectively. A theoretical cal-
culation of the laser characteristics agrees closely with the experimental results.

DOI: 10.1134/S1054660X12040238

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