Diode-Pumped Nd:YVO₄ Laser Passively Q-Switched
with Graphene Oxide Spin Coated on ITO Substrate¹

X. Li^a, G. Q. Li^a, *, S. Z. Zhao^a, X. M. Wang^a, L. Yin^a, H. Huang^b, and X. M. Ma^b

^a School of Information Science and Engineering and Shandong Provincial Key Laboratory of Laser Technology
and Application, Shandong University, Jinan 250100, China

^b School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China

*e-mail: gqiuli@sdu.edu.cn

Received November 1, 2011; in final form, November 4, 2011; published online March 6, 2012

Abstract—Two graphene oxide saturable absorbers (GO–SAs) spin coated on indium tin oxide (ITO) substrate
have been prepared and their transmissivity spectra have also been measured. The performance of the diode-
pumped passively Q-switched Nd:YVO₄ laser with GO–SA has been investigated for the first time. The shortest
pulse width of 113 ns and the highest peak power of 4.3 W are obtained at the pump power of 5.04 W. The
output laser characteristics have demonstrated that graphene oxide is a promising saturable absorber for passive
Q-switching.

DOI: 10.1134/S1054660X1204007X

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