High Efficiency 1341 nm Nd:GdVO₄ Bounce Laser
In-Band Pumped at 879 nm¹

L. H. Jin^a, B. J. Shen^b, N. Zhang^a, J. Tian^b, *, and J. H. Li^c

^a School of Life Science and Technology, Changchun University of Science and Technology, Changchun 130022, China

^b Laboratory of Clean Energy Technology, School of Life Science and Technology,
Changchun University of Science and Technology, Changchun 130022, China

^c School of Physics, Northeast Normal University, Changchun 130024, China

*e-mail: custtianjian@126.com

Received October 19, 2011; in final form, November 3, 2011; published online March 6, 2012

Abstract—A high-efficiency Nd:GdVO₄ bounce laser in-band pumped at 879 nm is demonstrated for the first
time. From a side-pumped Nd:GdVO₄ crystal, 8.2 W output was obtained with 18.5 W absorbed pump power.
Corresponding slope efficiency with respect to the absorbed pump power was 51.4%, and the beam quality fac-
tor M² is 1.13 and 1.15 for tangential direction and sagittal direction, respectively. Effects of crystal’s doping
concentration and temperature on laser power and conversion efficiency were also investigated.

DOI: 10.1134/S1054660X12040032

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