Kilohertz High Power Extracavity KGW Yellow Raman Lasers
Based on Pulse LD Side-Pumped Ceramic Nd : YAG¹

Y. Bai^{a, b,} *, X. M. Chen^a, J. X. Guo^a, H. L. Zhang^a, J. T. Bai^{a, b}, and Z. Y. Ren^{a, b}

^a National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base),
Institute of Photonics and Photon-Technology, Northwest University, Xi’ an 710069, China

^b Shaanxi Engineering Technology Research Center for Solid State Lasers and Application, Xi’ an 710069, China

*e-mail: by@nwu.edu.cn

Received October 10, 2011; in final form, October 18, 2011; published online February 6, 2012

Abstract—We report an efficient operation of a kilohertz nanosecond extracavity KGd(WO₄)₂ (KGW) crystal
Raman yellow laser, which is pumped by a 532 nm lasers based on pulse laser diode (LD) side-pumped ceramic
Nd : YAG, BBO electro-optical Q-switched and LBO crystal extracavity frequency doubling. With the 5 W, 10
ns and 1 kHz output power pumped at 532 nm, we obtained 2.58 W, 7.4 ns, 1 kHz second Stokes Raman laser
output at 579.54 nm for 768 cm^–1 Raman shift of KGW crystal, corresponding to a conversion efficiency of
51.4%. By changing the KGW crystal orientation, we further obtained 3.18 W, 7.8 ns, 1 kHz Raman pulses at
588.33 nm for 901 cm^–1 Raman shift, corresponding to a conversion efficiency of 63.3%. The beam quality fac-
tors M² of 579.54 and 588.33 nm were ( = 5.829, = 6.336) and ( = 6.405,
= 6.895), respectively.

DOI: 10.1134/S1054660X12030024

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