Passive Mode-Locking Yb³⁺:Sc₂SiO₅ Laser at 1040 nm
with SESAM¹

L. M. Su^a, J. Liu^a, *, C. Feng^a, X. W. Fan^a, L. H. Zheng^b, L. B. Su^b, and J. Xu^b

^a College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

^b Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics,
Chinese Academy of Sciences, Shanghai 201800, China

*e-mail: jieliu@sdnu.edu.cn

Received September 30, 2011; in final form, October 10, 2011; published online February 6, 2012

Abstract—Passive mode locking of the new crystal Yb³⁺:Sc₂SiO₅ (Yb:SSO) laser at 1040 nm in a w-type cav-
ity is reported for the first time to our knowledge. The laser operated at a repetition frequency of 94 MHz. A
pulse duration of 4.2 ps was produced with an average power of 543 mW and a highest pulse energy of 5.7 nJ,
corresponding it’s maximum peak power can reach to 1.4 kW.

DOI: 10.1134/S1054660X12030206

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