Diode-Pumped Nd:GAGGLBO Laser at 531 nm¹

J. Zou^a, *, H. Chu^b, and L. R. Wang^c

^a Electronic and Information Engineering College, Changchun University, Changchun, 130022, China

^b College of Quartermaster Technology, Jilin University, Changchun 130062, China

^c Management Office of Scientific Research, Changchun University, Changchun, 130022, China

*e-mail: zouji888@sina.com

Received September 28, 2011; in final form, September 29, 2011; published online February 6, 2012

Abstract—We report a green laser at 531 nm generation by intracavity frequency doubling of a continuous
wave (cw) laser operation of a 1062 nm Nd:GAGG laser under in-band diode pumping at 808 nm. A LiB₃O₅
(LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic genera-
tion of the laser. At an incident pump power of 18.5 W, as high as 933 mW of cw output power at 531 nm is
achieved. The fluctuation of the green output power was better than 3.5% in the given 4 h.

DOI: 10.1134/S1054660X12030334

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.