Y. Baia, b, *, X. M. Chena, b, B. L. Lua, b, Z. Y. Rena, b, and J. T. Baia, b
a National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base),
Institute of Photonics and Photon-Technology, Northwest University, Xian 710069, China
b Shaanxi Engineering Technology Research Center for Solid State Lasers and Application, Xian 710069, China
*e-mail: by@nwu.edu.cn
September 5, 2011; in final form, September 8, 2011; published online December 28, 2011
Abstract355 nm UV laser was obtained with a pulse width of less than 5 ns and a peak power at megawatt
level by adopting the 808 nm pulse laser diode (LD) side-pumped ceramic Nd:YAG and BBO crystal electro-
optical Q-switched. The single-pulse energy was measured to be 24.3 mJ with 4.86 ns pulse width and 5.11MW
peak power at a repetition rate of 1Hz under a 120 A pump current. Using a volume of beam splitting mirrors,
wavelength outputs at 1064, 532, and 355 nm pulse laser was obtained simultaneously with a respective average
output power of 656.6, 357.1, and 260.5 mW, the beam quality factor M2 are (
= 5.83,
= 5.61),
(
= 4.25,
= 4.08) and (
= 6.32,
= 6.15), corresponding to a conversion effi-
ciency at 11% from 1064 to 355 nm.
DOI: 10.1134/S1054660X12020016
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