1180 nm Raman Laser Operation of End-Pumping
Nd:GdAl₃(BO₃)₄/SrWO₄ Crystal¹

F. G. Yang^a, *, Y. Zhang^a, X. H. Hu^a, Y. G. Ke^a, L. Qiao^a, S. Z. Hu^a, Y. H. Wu^a,
Z. C. Xia^a, D. X. He^a, Z. Y. You^b, and C. Y. Tu^b

^a Department of Electronic Information Science, Fujian Jiangxia University, Fuzhou, Fujian 350108, China

^b Key Laboratory of Photo-electricity Materials Chemistry and Physics, Fujian Institute of Research on the Structure of
Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China

*e-mail: ruopiao78@163.com

Received September 3, 2011; in final form, September 3, 2011; published online December 28, 2011

Abstract—We present an end-pumped continuous-wave Raman laser at 1180 nm with a 60 mm long pure crys-
tal SrWO₄ and an Nd:GdAl₃(BO₃)₄ crystal. The highest output power Raman laser at 1180 nm is 15.5 mW cor-
responding to the pump power of 1.75 W. Results indicate that the intense self-doubling frequency effect of
GdAl₃(BO₃)₄ reduces the 1180 nm Raman laser output.

DOI: 10.1134/S1054660X12020223

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