All-Solid-State Nd:YVO₄ Laser at 1342 nm
under 914 nm Diode Laser Pumping¹

Y. L. Li^a, *, J. Y. Liu^b, Y. C. Zhang^a, T. Y. Zhang^a, T. Y. Ni^a, and Z. H. Tao^a

^a School of OptoElectronic Engineering, Changchun University of Science and Technology,
Changchun 130022, China

^b The Second Hospital of Jilin University, Changchun 130041, China

*e-mail: liyongliang1973@163.com

Received August 26, 2011; in final form, August 27, 2011; published online December 28, 2011

Abstract—A Nd:YVO₄ crystal was pumped directly into the emitting level by a laser diode at 914 nm. We
achieved an output power of 1.46 W at 1342 nm for an incident pump power of 18.3 W, corresponding to an
optical-to-optical conversion efficiency of 8.0%. The fluctuation of the output power was better than 2.3% in
the given 30 min. The beam quality M² factor value was equal to 1.15 at the maximum output power.

DOI: 10.1134/S1054660X12020132

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