Y. L. Li*, T. Y. Ni, T. Y. Zhang, Z. H. Tao, and Y. H. Zeng
School of OptoElectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
*e-mail: liyongliang1973@163.com
Received August 24, 2011; published online December 28, 2011
AbstractWe report a green laser at 532 nm generation by intracavity frequency doubling of a continuous
wave (CW) laser operation of a 1064 nm Nd:Y0.36Gd0.64VO4 laser under in-band diode pumping at 880 nm. An
GdCa4O(BO3)3 (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second
harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.92 W of CW output power
at 532 nm is achieved. The opticaltooptical conversion efficiency is up to 16.4%, and the fluctuation of the
green output power was better than 2.5% in the given 30 min.
DOI: 10.1134/S1054660X12020144
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