Long Wavelength Strain-Engineered InAs Multi-Layer Stacks
Quantum Dots Laser Diode on GaAs Substrate¹

M. H. You^{a, b,} *, Z. G. Li^a, X. Gao^a, X. D. Liu^a, Y. Deng^a, G. J. Liu^a,
L. Li^a, Z. P. Wei^a, and X. H. Wang^a

^a National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology,
Changchun 130022, China

^b Aviation University of Air Force, Changchun 130022, China

*e-mail: mhyou000@126.com

Received March 8, 2012; in final form, June 13, 2012; published online October 1, 2012

Abstract—The growth of GaAs based 1.5 m multi-layer stacked InAs quantum dots (QDs) has been investi-
gated by solid-source molecular beam epitaxy (SSMBE), which was very important devices for transmission
window. Owing to a strong electronic coupling between the QDs layers and the quantum wells (QWs), and anti-
mony (Sb) introduced by for long-wavelength semiconductor lasers were obtained. The device structure for
QDs laser diodes (LDs) with a cavity length of 1000 m and stripe width of 100 m as well as the device fab-
rication results will also be presented. The output performance was achieved with continuous wave (CW) oper-
ation, the measurement were from 20 to 60C with a temperature step of 10C. The threshold current density
was 168 A/cm², and the CW operating up to 20 mW at room temperature (RT) was achieved.

DOI: 10.1134/S1054660X12110187

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