Continuous-Wave Nd:YVO₄/KTiOPO₄ Green Laser at 542 nm
under Diode Pumping into the Emitting Level¹

J. H. Liu

School of Mechatronical Engineering, Changchun University of Science and Technology, Changchun 130022, China

e-mail: custliujianhe@163.com

Received December 28, 2011; published online September 3, 2012

Abstract—We report a green laser at 542 nm generation by intracavity frequency doubling of a continuous
wave (CW) laser operation of a 1086 nm Nd:YVO₄ laser under 880 nm diode pumping into the emitting level
⁴F_3/2. A KTiOPO₄ (KTP) crystal, cut for critical type I phase matching at room temperature is used for second
harmonic generation of the laser. At an incident pump power of 14.5 W, as high as 1.33 W of CW output power
at 542 nm is achieved. The optical-to-optical conversion efficiency is up to 9.2%, and the fluctuation of the
green output power was better than 3.8% in the given 30 min.

DOI: 10.1134/S1054660X1210012X

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