Compact Diode-Directly-Pumped Passively Mode-Locked TEM₀₀
Nd:GdVO₄ Laser at 1341 nm Using a Semiconductor
Saturable Absorber Mirror¹

K. Liu^{a, b}, F. Q. Li^a, Y. Liu^{a, b}, D. Cao^{a, b}, Y. Bo^a, Q. J. Peng^a, *,
D. F. Cui^a, J. Y. Zhang^a, and Z. Y. Xu^a

^a Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology,
Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190 China

^b Graduate School of the Chinese Academy of Sciences, 100190 China

*e-mail: pengqinjun@163.com

Received July 16, 2011; in final form August 8, 2011; published online November 28, 2011

Abstract—We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM₀₀ Nd:GdVO₄
laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the
absorbed pump power of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of
85.3 MHz with the pulse width of 45.3 ps, corresponding to an optical-optical efficiency of 8.8% and the slope
efficiency of 33.3%, respectively. The beam quality factor was measured to be M² = 1.18, indicating a TEM₀₀
mode.

DOI: 10.1134/S1054660X12010112

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