Long-Wavelength MBE Grown GaInNAs Quantum Well Laser
Emitting at 1270 nm¹

M. S. Alias*, F. Maskuriy, and S. M. Mitani

Advance Physical Technologies Laboratory, Telekom Malaysia Research and Development (TMR&D),
Lingkaran Teknokrat Timur, Cyberjaya 63000 Selangor, Malaysia

*e-mail: sharizal@tmrnd.com.my

Received August 11, 2011; in final form, August 12, 2011; published online November 28, 2011

Abstract—In this paper, we report on comprehensive theoretical optical properties analysis and experimental
device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoret-
ical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high
material gain near 1.3 m and optimal optical mode confinement are calculated. Experimentally, room temper-
ature lasing emission around 1.27 m with threshold current densities of 670–810 A/cm² is obtained from the
fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.

10.1134/S1054660X1201001X

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