Synthesis and Analysis of the Indium–Gallium–Zinc Oxide Semiconductor Structure

Abstract— A solid-phase synthesis of the InGaZn₂O₅ semiconductor oxide is reported; its phase composition, structure, and morphology are analyzed using XRD, full-profile XRD analysis, scanning electron microscopy, energy-dispersive X-ray spectroscopy, IR spectroscopy, and Raman spectroscopy. It is shown that the studied compound corresponds to the InGaZn₂O₅ structure, P6₃/mmc space group; its structural parameters are reported. The sample prepared under the chosen conditions has morphology characterized by polydispersity, presence of agglomerates, and by the absence of pronounced crystallite faceting. IR and Raman spectra of InGaZn₂O₅ are reported for the first time.