Molecular Beam Epitaxy of Mixed h-GaTe/m-GaTe Thin Films on GaAs(001) Substrates: Structural and Photoluminescence Properties
S. V. Sorokina,*, I. V. Sedovaa, P. S. Avdienkoa, D. D. Firsovb, O. S. Komkova,b,
A. I. Galimova, M. A. Yagovkinaa, and M. V. Rakhlina
a Ioffe Institute, St. Petersburg, 194021 Russia
b St. Petersburg Electrotechnical University LETI, St. Petersburg, 197376 Russia
Correspondence to: * e-mail: sorokin@beam.ioffe.ru
Received 1 September, 2022
Abstract—Thin GaTe films were grown by molecular beam epitaxy (MBE) on GaAs(001) substrates. X-ray powder diffraction confirmed the coexistence of the h- and m-GaTe phases in all grown layers. A quantitative correlation between the MBE growth conditions and the phase composition of the grown films is established, and the upper limit of the MBE growth temperature for thin GaTe/GaAs(001) films is experimentally determined. New data are presented confirming the defect-related origin of the broad emission line with an energy maximum of ~1.45–1.46 eV, which dominates the low-temperature photoluminescence spectra of the grown GaTe/GaAs(001) layers.
Keywords: GaTe, layered semiconductors, molecular-beam epitaxy, structural properties, photoluminescence, thin films
DOI: 10.1134/S1063776122120093