Peculiarities of Electron Spectrum Rearrangement
for the Double-Well Heterostructure GaAs/AlGaAs
with a Variable Dimensionality of Electronic States
in an External Electric Field

Yu. A. Aleshchenko^a,*, A. E. Zhukov^b, V. V. Kapaev^a, Yu. V. Kopaev^a,
P. S. Kop’ev^b, and V. M. Ustinov^b

^aLebedev Physical Institute, Russian Academy of Sciences,
Leninski pr. 53, Moscow, 119991 Russia

^bIoffe Physicotechnical Institute, Russian Academy of Sciences,
Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia

*e-mail: yuriale@mail1.lebedev.ru

Received September 29, 2003

Abstract—Peculiarities of the electron spectrum rearrangement for the double-well heterostructure
GaAs/AlGaAs with a variable dimensionality of electronic states in an external electric field are investigated
theoretically and experimentally. The structure is an important part of the active element of a quantum-well uni-
polar semiconductor laser proposed by the authors earlier. The possibility of controlling the dimensionality of
the lower laser subband in such an active element by an external electric field is demonstrated. © 2004 MAIK
“Nauka/Interperiodica”.

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