Forbidden Optical Transitions Between Impurity Levels
in Silicon and Gallium Phosphide

Ya. E. Pokrovski*, O. I. Smirnova, and N. A. Khval’kovski

Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 103907 Russia

*e-mail: yaep@mail.cplire.ru

Received September 9, 1999

Abstract—Experimental estimates are made of absorption cross sections for forbidden optical transitions from
the ground state to long-lived excited states of P, As, Sb, In, and Ga impurities in silicon and Te impurities in
gallium phosphide. The results can be used to predict the possibility of long-wavelength stimulated emission
being excited as a result of the population inversion of long-lived impurity states in these materials. © 2000
MAIK “Nauka/Interperiodica”.

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.